Thermal analysis of deep sub-micron PD SOI MOSFET with asymmetric source and drain

Autor:	Tang Wei, Wu Longsheng, Liu Youbao
Rok vydání:	2010
Předmět:	Silicon business.industry Computer science Semiconductor device modeling Silicon on insulator chemistry.chemical_element Thermal conductivity CMOS chemistry MOSFET Optoelectronics Electric potential business Thermal analysis
Zdroj:	2010 3rd International Conference on Computer Science and Information Technology.
DOI:	10.1109/iccsit.2010.5563530
Popis:	Focusing on the influence of self-heating effect on electrical properties of the SOI device, thermal analysis of the partially depleted (PD) SOI MOSFET with asymmetric source and drain is performed, and temperature distribution and electrostatic potential distribution of the device are simulated with TCAD tools. The results show that: the heat source of the device is the regions with the highest electrostatic potential; the lattice temperature of the device rises with the shrinking of channel length and silicon film thickness, and the former has more influence. PD SOI MOSFET with asymmetric source and drain is better in reducing self-heating effect than the other SOI devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::727b16c5a3347dff2edeb680bbc69ca3 https://doi.org/10.1109/iccsit.2010.5563530 Zobrazit plný text záznamu