| Autor: |
John Scharf, Rommel Noufi, Steve Johnston, Clay DeHart, Yanfa Yan, Wyatt K. Metzger, Brian E. McCandless, Miguel A. Contreras, Jian V. Li, Manuel J. Romero, Ingrid Repins, Brian Egaas |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
2008 33rd IEEE Photovolatic Specialists Conference. |
| ISSN: |
0160-8371 |
| DOI: |
10.1109/pvsc.2008.4922628 |
| Popis: |
We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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