Silicon nitride hardmask fabrication using a cyclic CHF3-based reactive ion etching process for vertical profile nanostructures
| Autor: | Heinz Jäckel, Yogesh Jeyaram, Peter Kaspar, Annette Foelske, Sandro Bellini, Rüdiger Kötz |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Process Chemistry and Technology Nanotechnology Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Silicon nitride chemistry X-ray photoelectron spectroscopy Etching (microfabrication) Materials Chemistry Optoelectronics Dry etching Electrical and Electronic Engineering Reactive-ion etching business Silicon oxide Instrumentation Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1179-1186 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3501120 |
| Popis: | A cyclic approach to silicon nitride dry-etching is presented, which differs in concept from most established high aspect ratio etching processes. Alternating steps of CHF3 etching and oxygen plasma treatment are applied to form vertical sidewalls. During the CHF3 etching step, an etch-inhibiting fluorocarbon film gradually forms on silicon nitride surfaces, whereas the oxygen plasma step removes the fluorocarbon layer and restores the bare nitride surface. By adjusting the timing between the two steps, the etch-inhibition by the fluorocarbon film can be controlled to yield vertical sidewalls. Using x-ray photoelectron spectroscopy, the formation and removal of the fluorocarbon film are confirmed, and its chemical composition is analyzed. The authors show the influence of cycle step duration on etched sidewall angles and present the results of an optimized set of etching parameters for smooth and vertical sidewalls. By feeding only one gas at a time to the plasma reactor, they avoid having to control the ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|