Embedded TFT nand-Type Nonvolatile Memory in Panel
| Autor: | Chrong Jung Lin, Szu-I Hsieh, Ya-Chin King, Hung-Tse Chen |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Transistor Gate dielectric Electrical engineering NAND gate Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Electronic Optical and Magnetic Materials law.invention Non-volatile memory Hardware_GENERAL Gate oxide law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Metal gate Hardware_LOGICDESIGN |
| Zdroj: | IEEE Electron Device Letters. 28:499-501 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.896894 |
| Popis: | A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications |
| Databáze: | OpenAIRE |
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