Preparation of polyperinaphthalenic organic semiconductive nano particles by excimer

Autor: Satoru Nishio, Akiyoshi Matsuzaki, Kazuyuki Tamura, Yukinori Hato, Jun Murata, Junko Kitahara, Hiroshi Fukumura, Nobuo Ando, Teruhiko Kan
Rok vydání: 2002
Předmět:
Zdroj: International Congress on Applications of Lasers & Electro-Optics.
DOI: 10.2351/1.5066181
Popis: Polyperinaphthalene (PPN) nano particles are prepared by excimer laser ablation (ELA) of a 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) target or a mixture target of PTCDA with Co or TiO2 powder (PTCDA/X: X=Co,TiO2) using XeCl excimer laser beams. Enhancement of elimination reaction of side groups of PTCDA is observed by ELA of PTCDA/Co and PTCDA/TiO2. In particular, for PTCDA/TiO2, the reaction occurs at a fluence of 0.25 Jcm−2 pulse−1 much lower than the case of PTCDA/Co at room temperature. Heterojunctions between the PPN nano particle layer and Si wafers are formed. Well rectifier property is demonstrated for the junction with n-Si substrates. Current versus voltage curve of the heterojunction with a n-Si substrate in the dark and under illumination shows the possibility of the junction as a photovoltaic cell. Furthermore, PPN nano particles are applied to anode electrodes for ultra thin rechargeable Li ion batteries. In-situ Raman spectroscopy under lithium ion doping is performed to elucidate the storage mechanism of lithium ion at cis-polyacetylene-type edge (phenanthrene-edge) of PPN structure.Polyperinaphthalene (PPN) nano particles are prepared by excimer laser ablation (ELA) of a 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) target or a mixture target of PTCDA with Co or TiO2 powder (PTCDA/X: X=Co,TiO2) using XeCl excimer laser beams. Enhancement of elimination reaction of side groups of PTCDA is observed by ELA of PTCDA/Co and PTCDA/TiO2. In particular, for PTCDA/TiO2, the reaction occurs at a fluence of 0.25 Jcm−2 pulse−1 much lower than the case of PTCDA/Co at room temperature. Heterojunctions between the PPN nano particle layer and Si wafers are formed. Well rectifier property is demonstrated for the junction with n-Si substrates. Current versus voltage curve of the heterojunction with a n-Si substrate in the dark and under illumination shows the possibility of the junction as a photovoltaic cell. Furthermore, PPN nano particles are applied to anode electrodes for ultra...
Databáze: OpenAIRE