| Autor: |
Yoshimine Kato, R. G. Gann, Carl W. Wilmsen, Kent M. Geib, P. R. Brusenback |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1530 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.585461 |
| Popis: |
The surface topography and the chemical composition of anodic oxides on GaP have been studied. The surface of the as grown anodic oxide was featureless but annealing at T≥600 °C causes the formation of hollow bumps and blisters which increase in size with temperature or duration of the anneal. The oxide composition was investigated by x‐ray photoelectron spectroscopy (XPS) and was found to be a nonuniform mixture of P2O5, Ga2O3, and GaPO4. There is some evaporation of phosphorus oxide near the surface when annealed at T≥300 °C but little or none from the bulk of the oxide film.The surface topography and the chemical composition of anodic oxides on GaP have been studied. The surface of the as grown anodic oxide was featureless but annealing at T≥600 °C causes the formation of hollow bumps and blisters which increase in size with temperature or duration of the anneal. The oxide composition was investigated by x‐ray photoelectron spectroscopy (XPS) and was found to be a nonuniform mixture of P2O5, Ga2O3, and GaPO4. There is some evaporation of phosphorus oxide near the surface when annealed at T≥300 °C but little or none from the bulk of the oxide film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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