Bolometric effect in the far-infrared response of a conducting layer on a semi-insulating substrate
| Autor: | M. L. Sadowski, A. M. Witowski, M. Grynberg, Serge Huant, Gerard Martinez |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Photoconductivity Transfer-matrix method (optics) Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Cadmium telluride photovoltaics Spectral line Magnetic field Condensed Matter::Materials Science Far infrared Optoelectronics business Layer (electronics) |
| Zdroj: | Physical Review B. 60:10908-10912 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | Far-infrared photoconductivity measurements were performed on In-doped CdTe layers grown on a semiinsulating GaAs substrate. A thin layer of ZnTe was usually grown between the CdTe and GaAs. The photoconductivity spectra exhibited an extremely rich structure. Some of the peaks were identified as intradonor transitions, while others, whose energy does not change with magnetic field, were more difficult to allocate. To explain the spectra, calculations of the complete far infrared optical response of the CdTe/ZnTe/GaAs structures were performed and compared with the photoconductivity results. The mathematical model was formulated in terms of the dynamic dielectric function of the structure, and calculations were done by means of the transfer matrix method. A physical model is proposed, linking the absorption of light by the crystal lattice with the observed photoconductivity. The same effect is observed in similar measurements performed on other materials, such as GaN and GaAs. |
| Databáze: | OpenAIRE |
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