STM study of the charged defects on the Ge(111)-c(2×8) surface and the effect of density of states on defect-induced perturbation
| Autor: | Roy F. Willis, H. Mai, Ilya Chizhov, Geunseop Lee |
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| Rok vydání: | 2000 |
| Předmět: |
Brightness
Condensed matter physics General Physics and Astronomy chemistry.chemical_element Germanium Surfaces and Interfaces General Chemistry Electronic structure Condensed Matter Physics Surfaces Coatings and Films law.invention Delocalized electron chemistry law Density of states Scanning tunneling microscope Quantum tunnelling Surface states |
| Zdroj: | Applied Surface Science. 166:295-299 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(00)00412-8 |
| Popis: | Defects present on the Ge(111)-c(2×8) surface and an effect of surface electronic states on the defect-induced perturbation have been studied by scanning tunneling microscopy (STM). The defects exhibit voltage-dependent characteristics in the image. In particular, the empty-state images with low bias voltages exhibit delocalized brightness variation around the defects, suggesting that these defects are charged relative to the clean, unperturbed surface. The voltage-dependent but nonmonotonic amplitude of the delocalized brightness in the STM image is explained in relation to the surface electronic structure of Ge(111)-c(2×8) and the tunneling probabilities. |
| Databáze: | OpenAIRE |
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