Three-dimensional CMOS integration
| Autor: | G.W. Neudeck |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Fabrication
Materials science business.industry Silicon on insulator Lateral overgrowth Hardware_PERFORMANCEANDRELIABILITY Epitaxy Electronic Optical and Magnetic Materials Monocrystalline silicon CMOS Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering business Instrumentation |
| Zdroj: | IEEE Circuits and Devices Magazine. 6:32-38 |
| ISSN: | 8755-3996 |
| DOI: | 10.1109/101.59443 |
| Popis: | The advantages of CMOS technology are examined, and problems of and approaches to 3-D integration are discussed. Particular attention is given to silicon-on-insulator (SOI) technology and the use of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) of monocrystalline silicon. The fabrication of 3-D CMOS devices using these techniques is described. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|