Dielectric anti-reflection coating application in a 0.175 μm dual-damascene process

Autor:	X.J. Ning, G.Y. Lee, D.M. Dobuzinsky, Z.G. Lu, G. Costrini
Rok vydání:	2002
Předmět:	Materials science business.industry Copper interconnect Dielectric engineering.material law.invention Optics Resist Coating law engineering Photolithography business Critical dimension Lithography Layer (electronics)
Zdroj:	Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
Popis:	Various dielectric anti-reflection coatings (DARCs) were evaluated using 0.175 /spl mu/m dual-damascene structures to examine the lithography process window and integration capability. Double-DARC layers have been developed with the optimum refractive indices and thickness, based on reflectance simulations and measurements, to provide better critical dimension (CD) control as compared to organic ARC and single-DARC layer applications. The integration scheme using a double-DARC layer provides substantial benefit for 0.175 /spl mu/m metallization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7240a73d10498de3488704b104b97c01 https://doi.org/10.1109/iitc.1998.704759 Zobrazit plný text záznamu