Photothermoelectric Analysis of Chemically Deposited Cadmium Sulfide Layers

Autor:	Robert S. Feigelson, Richard H. Bube, Chen‐ho Wu
Rok vydání:	1972
Předmět:	Photoexcitation chemistry.chemical_compound Charge-carrier density Materials science Impurity diffusion chemistry Impurity Seebeck coefficient Photoconductivity Analytical chemistry General Physics and Astronomy Cadmium sulfide
Zdroj:	Journal of Applied Physics. 43:756-758
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1661201
Popis:	Carrier mobilities in the few thousandths cm2/V sec can be reliably inferred from thermoelectric power measurements, considerably smaller than can be determined by standard Hall measurements. Techniques of photothermoelectric analysis are applied to chemically deposited layers of CdS and CdS–CdSe, as prepared, and after photosensitization by impurity diffusion. Photoconductivity in the unsensitized films is due wholly to an increase in mobility; in the sensitized films, both carrier density and mobility increase with photoexcitation. The high‐light mobility is increased by a factor of 102 by impurity sensitization.
Databáze:	OpenAIRE
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