Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions
| Autor: | A. A. Marmalyuk, M. A. Surnina, E. G. Gordeev, I. A. Boginskaya, R. Kh. Akchurin, M. A. Ladugin, E. V. Egorova, L. B. Berliner |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry chemistry.chemical_element Heterojunction Substrate (electronics) Epitaxy Condensed Matter::Materials Science chemistry.chemical_compound chemistry Quantum dot Deposition (phase transition) Optoelectronics Metalorganic vapour phase epitaxy Trimethylindium business Indium |
| Zdroj: | Technical Physics. 59:78-84 |
| ISSN: | 1090-6525 1063-7842 |
| DOI: | 10.1134/s1063784214010034 |
| Popis: | The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of using these factors in the process of metal-organic vapor phase epitaxy (MOVPE) are studied. To refine the temperature dependence of the In evaporation rate, a computational experiment taking into account real MOVPE conditions is conducted. An ultimate change in the composition of In droplets contacting the substrate at a high temperature is estimated, and the thickness and composition of crystallizing In-Ga-As solid solution are calculated. It is shown that the size and density of the droplet array to a great extent depend on the crystallochemical structure of the substrate surface and deposition conditions. |
| Databáze: | OpenAIRE |
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