512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes
| Autor: | Dennis Norton, Jonathon T. Olesberg, Thomas F. Boggess, Sydney Provence, John P. Prineas, Russell J. Ricker, L. M. Murray |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Infrared business.industry Superlattice 02 engineering and technology 021001 nanoscience & nanotechnology law.invention Gallium antimonide chemistry.chemical_compound 020210 optoelectronics & photonics Optics chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Indium arsenide 0210 nano-technology business Diode Molecular beam epitaxy Common emitter Light-emitting diode |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | InAs/GaSb superlattice light-emitting diodes are a promising technology for progressing the state-of-the art infrared scene projectors. By targeting a specific band of interest, they are able to achieve apparent temperatures greater than that of conventional resistor arrays and settling times on the order of nanoseconds. We report the fabrication of a dual-color infrared InAs/GaSb superlattice light-emitting diode array for operation in the mid-wave infrared. By stacking two superlattice structures back-to-back with a conductive layer separating them, independently operable, dual-color, cascaded InAs/GaSb superlattice light-emitting diodes were grown via molecular beam epitaxy on (100) GaSb substrates. At 77K, the emitted wavelengths are in the 3.2-4.2μm and 4.2-5.2μm range, with peak wavelengths at 3.81μm and 4.72μm. Using photolithography and wet etching, a 512×512 array of 48μm-pitch pixels were fabricated and hybridized to a silicon read-in integrated circuit. Test arrays with an 8×8 matrix of pixels demonstrated greater than 2 W/cm2dsr for the 4.7μm emitter and greater than 5W/cm2dsr for the 3.8μm emitter; the lower radiance in the long-wave emitter is due to a small active region volume left after fabrication. These respectively correspond to apparent temperatures greater than 1400K and 2000K in the 3-5μm band including fill factor. |
| Databáze: | OpenAIRE |
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