Electrical behavior of CdS/Al Schottky barrier diode at low temperatures
Autor: | P. M. Parameshwari, K. Gopalakrishna Naik, P. Satyanarayana Bhat, B. V. Shrisha |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Interface layer Materials science Equivalent series resistance business.industry Schottky barrier Analytical chemistry Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Metal visual_art 0103 physical sciences visual_art.visual_art_medium Optoelectronics Thin film 0210 nano-technology business Diode Voltage |
Zdroj: | Materials Today: Proceedings. 3:1620-1626 |
ISSN: | 2214-7853 |
DOI: | 10.1016/j.matpr.2016.04.051 |
Popis: | In this study CdS/Al Schottky barrier diode (SBD) was fabricated by depositing Al metal dot of area 0.001256 cm2 on spray deposited CdS thin film. Current-voltage characteristics of CdS/Al SBD were measured at different temperatures ranging 303-193 K and were analysed to understand the effect of temperature on the electrical parameters of the diode. Both forward and reverse current was found to decrease with the decrease of temperature. The series resistance (RS) and ideality factor (n) were found to increase for the decrease of temperature. The barrier height (ϕb), and Richardson constant (A∗∗) are found to be equal to 0.128 eV and 8.94 x 10-5 AK-2cm-2, respectively. Room temperature capacitance-voltage (C-V) measurement was used to find the carrier concentration (NA) and built in voltage (Vbi) of the CdS/Al Schottky barrier diode. Carrier concentration and the built in potential were found to be 1.84 x 1023 m-3 and 0.393 V, respectively. Schottky barrier height (ɸb) was also measured from C-V characteristics at room temperature and is equal to 0.399 eV. The value of barrier height obtained from low temperature I-V measurements was smaller than that obtained from C-V characteristics. This can be due to the existence of an interface layer or due to spatial inhomogeneities at the CdS/Al contact. |
Databáze: | OpenAIRE |
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