Edge Contact for Carrier Injection and Transport in MoS2 Field-Effect Transistors
| Autor: | Hamza Zad Gul, Jung Ho Kim, Seok Joon Yun, Sung-Gyu Lee, Young Hee Lee, Homin Choi, Byoung Hee Moon, Gang Hee Han |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed matter physics Graphene General Engineering Current crowding General Physics and Astronomy 02 engineering and technology Extremely Helpful Edge (geometry) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention symbols.namesake law Fermi level pinning symbols General Materials Science Field-effect transistor van der Waals force 0210 nano-technology |
| Zdroj: | ACS Nano. 13:13169-13175 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.9b05965 |
| Popis: | The contact properties of van der Waals layered semiconducting materials are not adequately understood, particularly for edge contact. Edge contact is extremely helpful in the case of graphene, for... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|