The Path to Compact, Efficient Solid-State Transistor-Driven Accelerators
| Autor: | Nguyen, Dinh, Buechler, Cynthia, Dale, Gregory, Dolgashev, Valery, Fleming, Ryan, Holloway, Michael, Jongewaard, Erik, Lewellen, John, Nanni, Emilio, Neilson, Jeffrey, Patrick, Douglas, Sy, Ann, Tantawi, Sami |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| DOI: | 10.18429/jacow-ipac2018-mopml052 |
| Popis: | Small, lightweight, few-MeV electron accelerators that can operate with low-voltage power sources, e.g., solid-state transistors running on 50 VDC, instead of high-voltage klystrons, will provide a new tool to enhance existing applications of accelerators as well as to initiate new ones. Recent advances in gallium nitride (GaN) semiconductor technologies * have resulted in a new class of high-power RF solid-state devices called high-electron mobility transistors (HEMTs). These HEMTs are capable of generating a few hundred watts at S-, C- and X-bands at 10% duty factor. We have characterized a number of GaN HEMTs and verified they have suitable RF characteristics to power accelerator cavities **. We have measured energy gain as a function of RF power in a single low-beta C-band cavity. The HEMT powered RF accelerators will be compact and efficient, and they can operate off the low-voltage DC power buses or batteries. These all-solid-state accelerators are also more robust, less likely to fail, and are easier to maintain and operate. In this poster, we present the design of a low-beta, 5.1-GHz cavity and beam dynamics simulations showing continuous energy gain in a ten-cavity C-band prototype. Proceedings of the 9th Int. Particle Accelerator Conf., IPAC2018, Vancouver, BC, Canada |
| Databáze: | OpenAIRE |
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