Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
| Autor: | Fang-I Lai, Yu Lin Tsai, Chun Kai Chang, Peichen Yu, Kuo-Ju Chen, Hau-Vei Han, Jin Kong Sheu, Hao-Chung Kuo, Hsin-Chu Chen, Wei-Chi Lai, Chien-Chung Lin |
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| Rok vydání: | 2013 |
| Předmět: |
Photon
Materials science Renewable Energy Sustainability and the Environment business.industry Energy conversion efficiency medicine.disease_cause Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Wavelength Quantum dot medicine Optoelectronics Quantum efficiency business Luminescence Ultraviolet |
| Zdroj: | Solar Energy Materials and Solar Cells. 117:531-536 |
| ISSN: | 0927-0248 |
| Popis: | This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380–440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs. |
| Databáze: | OpenAIRE |
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