Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry
| Autor: | Jeffery Stevens, Mark A. Eriksson, Kenton D. Childs, Joel R. Wendt, K. Eng, H. L. Stalford, Ralph W. Young, Michael Lilly, G. A. Ten Eyck, Robert K. Grubbs, Richard P. Muller, Lisa A Tracy, Malcolm S. Carroll, E. P. Nordberg |
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| Rok vydání: | 2009 |
| Předmět: |
Nanostructure
Materials science Silicon business.industry chemistry.chemical_element Conductance Geometry Charge (physics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor chemistry Gate oxide Quantum dot Quantum dot laser business |
| Zdroj: | Physical Review B. 80 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.80.115331 |
| Popis: | We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb-blockade behavior showing single-period conductance oscillations that are consistent with a lithographically defined quantum dot is exhibited in several MOS quantum dots with an open-lateral quantum-dot geometry. Decreases in mobility and increases in charge defect densities (i.e., interface traps and fixed-oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities and their role in gated Si quantum dots. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully qualified complementary metal-oxide semiconductor facility. |
| Databáze: | OpenAIRE |
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