Effect of Ga-Doping on Atomic-Layer-Deposited Ultrathin InGaO Thin Film Transistors with BEOL-Compatibility

Autor: Jie Zhang, Zhuocheng Zhang, Dongqi Zheng, Zehao Lin, Adam Charnas, Peide. D. Ye
Rok vydání: 2023
Zdroj: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
DOI: 10.1109/vlsi-tsa/vlsi-dat57221.2023.10133982
Databáze: OpenAIRE