Study on plasma characteristics and gas analysis before and after recovery using liquid-fluorocarbon precursor

Autor: Byoungmoon Oh, Geun Young Yeom, Dain Sung, Kyongnam Kim, Junyoung Park
Rok vydání: 2020
Předmět:
Zdroj: Applied Surface Science. 532:147358
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2020.147358
Popis: Perfluorocarbon (PFC) gas is a representative greenhouse gas with high global warming potential (GWP) and is mainly used in the etching processes applicable to the manufacture of semiconductor devices. High capacity and high integration have been achieved in recent years as semiconductor device structures have been replaced by vertical layer structures, and the consumption of PFC gas has exploded due to the increase in high aspect ratio and patterning processes. In this study, the etching and recovery process were performed using C5F8 in L-FC which is in liquid phase at room temperature. This is because the ratio of F and C constituting C4F8, which is a PFC gas used for conventional etching, is similar. In addition, the recovered C5F8 was injected back into the chamber to confirm its reusability, and the electron temperature, plasma density, and ion energy distribution were analyzed. In addition, based on these data, the Si and SiO2 etching process requiring high selectivity was applied using the gas obtained before and after recovery. An analysis of the surface composition of Si and SiO2 after the etching process confirmed the possibility of recovering and reusing the exhaust gas during the process.
Databáze: OpenAIRE
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