SiGe alloys: growth, properties and applications
| Autor: | Subramanian S. Iyer, Gary L. Patton, Johannes M. C. Stork, M. Arienzo, Bernard S. Meyerson |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Band gap Bipolar junction transistor General Physics and Astronomy Nanotechnology Heterojunction Surfaces and Interfaces General Chemistry Chemical vapor deposition Condensed Matter Physics Epitaxy Lower temperature Surfaces Coatings and Films Optoelectronics business Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. :377-386 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/0169-4332(91)90361-m |
| Popis: | Due to advances in epitaxial techniques, the ability to deposit high-quality epitaxial silicon-germanium alloys at lower temperature, has opened up the applications of pseudomorphicSi1−xGex films in advanced bipolar transistors and in novel device structures. In this review paper, the various methods of growth of Si Ge alloys are discussed, including low-temperature epitaxy by ultra-high vacuum chemical vapor deposition (UHV/CVD) and molecular beam epitaxy (MBE). The morphology of growth and the stability of the deposited films are then presented. The major application of Si Ge alloys in integrated processes has been in the bipolar transistors area. The application of these alloys to the bandgap engineering of bipolar devices is discussed, including the most recent accomplishment of 75 GHzfT heterojunction bipolar transistors using Si Ge in the base. |
| Databáze: | OpenAIRE |
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