Suited growth parameters inducing type of conductivity conversions on chemical spray pyrolysis synthesized SnS thin films
| Autor: | F.A. Pulgarín-Agudelo, E. Santiago-Jaimes, J.A. Andrade-Arvizu, Osvaldo Vigil-Galán, M.F. García-Sánchez, Maykel Courel-Piedrahita, Antonio Arce-Plaza, E. Valencia-Resendiz |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope Band gap Analytical chemistry chemistry.chemical_element 02 engineering and technology Substrate (electronics) Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Analytical Chemistry symbols.namesake Fuel Technology chemistry 0103 physical sciences symbols Thin film Homojunction 0210 nano-technology Raman spectroscopy Tin |
| Zdroj: | Journal of Analytical and Applied Pyrolysis. 121:347-359 |
| ISSN: | 0165-2370 |
| DOI: | 10.1016/j.jaap.2016.08.016 |
| Popis: | Tin monosulfide (SnS) is a promising Cd-free candidate as absorber layer in Thin Film Solar Cell technology. In this work SnS thin films were synthesized by chemical spray pyrolysis (CSP) technique using a 0.2 M equimolar precursor solution of tin chloride and thiourea at substrate temperatures of 350, 370 and 390 °C and pressure for 0.5 and 1.0 kgf/cm 2 . Characterization of synthesized films was performed by X-ray diffraction, Raman spectroscopy, scanning electron and atomic force microscopy, transmission, reflection and absorption measurements, and electric characterization techniques. Films show an orthorhombic phase, p -type conductivity, a direct optical energy band gap of 1.3–1.7 eV and a high absorption coefficient (≥10 4 /cm). In this work, we have found that the in-situ variation of the carrier gas pressure induced n -type electrical conductivity on SnS films, which will allow an in-situ serial fabrication of the SnS homojunction without the need of additional doping materials. |
| Databáze: | OpenAIRE |
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