Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED
| Autor: | Anil Kawan, Soon-Jae Yu, Jun-Ho Sung |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Fabrication Materials science Wafer bonding business.industry 02 engineering and technology Photoresist 021001 nanoscience & nanotechnology Chip 01 natural sciences Electronic Optical and Magnetic Materials Chemical-mechanical planarization 0103 physical sciences Trench Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Flip chip |
| Zdroj: | Transactions on Electrical and Electronic Materials. 19:230-234 |
| ISSN: | 2092-7592 1229-7607 |
| DOI: | 10.1007/s42341-018-0033-9 |
| Popis: | The objective of this study was to develop a fabrication process to realize feasible n-type GaN thinning on a 365-nm flip chip ultraviolet LED for enhancement of light output power. The fabrication process included isolation trench filling using epoxy-based SU-8 photoresist, aligned wafer bonding, and sapphire laser lift-off techniques. Study of laser lift-off process for successful transfer of the flip chip LED GaN epilayers to the carrier wafer using different SU-8 trench filling methods are in progress. The first method of SU-8 trench filling was implemented on a flip chip LED wafer with chip isolation defined up to n-type GaN, whereas the second method of SU-8 trench filling was implemented on a flip chip LED wafer with chip isolation defined down to the sapphire substrate. SU-8 2 and SU-8 2025 series were used for the first and second trench filling methods, respectively. In addition to SU-8 trench filling, the second method comprised Cu electroplating and planarization polishing. |
| Databáze: | OpenAIRE |
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