Determination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements

Autor:	A. M. Engwall, Kyung-Suk Kim, Zhaoxia Rao, Hanxun Jin, Eric Chason
Rok vydání:	2020
Předmět:	010302 applied physics Materials science Mechanics of Materials Mechanical Engineering 0103 physical sciences Wafer curvature 02 engineering and technology Composite material Thin film 021001 nanoscience & nanotechnology 0210 nano-technology Condensed Matter Physics 01 natural sciences
Zdroj:	Journal of Applied Mechanics. 87
ISSN:	1528-9036 0021-8936
DOI:	10.1115/1.4047572
Popis:	We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::71a8ca4f14a5fb3a8c7bf0a7bacdbe63 https://doi.org/10.1115/1.4047572 Zobrazit plný text záznamu