Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB
| Autor: | Hiromi Yamauchi, M. Masahara, Y. X. Liu, Hiroyuki Ota, Yukinori Morita, Shin-ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Shinji Migita, Yoshie Ishikawa, Wataru Mizubayashi, Junichi Tsukada |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Fabrication business.industry Condensed Matter Physics Line edge roughness Atomic and Molecular Physics and Optics Line (electrical engineering) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Fin (extended surface) Threshold voltage Optoelectronics Wafer Electrical and Electronic Engineering business Layer (electronics) Communication channel |
| Zdroj: | Microelectronic Engineering. 147:290-293 |
| ISSN: | 0167-9317 |
| Popis: | Display Omitted Triangular fin channel double-gate MOSFETs were fabricated on SOTB.A high threshold voltage shift was obtained in triangular fin devices.A smaller variability was confirmed in triangular fin devices by wet etching.Uniform line edges of a triangular fin were formed by wet etching.A damage-free BOX layer was obtained by the orientation dependent wet etching. Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (100) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer. |
| Databáze: | OpenAIRE |
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