Test structure measuring inter- and intralayer coupling capacitance of interconnection with subfemtofarad resolution
| Autor: | Mitsutoshi Shirota, Yasuo Inoue, Tetsuya Watanabe, Shuhei Iwade, Toshiki Kanamoto, Tatsuya Kunikiyo, Yoshihide Ajioka, H. Asazato, H. Makino, K. Eikyu, K. Ishikawa |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Coupling
Capacitive coupling Interconnection Materials science Differential capacitance business.industry Copper interconnect Capacitance Electronic Optical and Magnetic Materials Parasitic capacitance Electronic engineering Optoelectronics Node (circuits) Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 51:726-735 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2004.826899 |
| Popis: | We present a new test structure measuring inter- and intralayer coupling capacitance parasitic to the same target interconnection with subfemtofarad resolution. The coupling capacitance as well as fringing capacitance measured by the test structure are demonstrated for two-level copper interconnections used in 90-nm technology node. In addition, we demonstrate that the accuracy of layout parameters extraction is improved by nondestructive inverse modeling of a copper interconnect cross-sectional structure, which reproduces the pitch dependence of the measured inter- and intralayer coupling capacitance within about a 1% error. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|