Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films
| Autor: | Chuen-Guang Chao, Horng-Chih Lin, Tswen-Hsin Liu, S.Y. Huang |
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| Rok vydání: | 2012 |
| Předmět: |
Amorphous silicon
Materials science Annealing (metallurgy) Metals and Alloys Mineralogy chemistry.chemical_element Surfaces and Interfaces engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Stress (mechanics) chemistry.chemical_compound Nickel Polycrystalline silicon Compressive strength chemistry law Materials Chemistry engineering Thin film Crystallization Composite material |
| Zdroj: | Thin Solid Films. 520:2984-2988 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.11.041 |
| Popis: | The present study describes a method enabling the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films. Glass substrates coated with a-Si films were contacted with ground nickel sheets under compressive stresses ranging from 3.7 to 265.8 MPa at 550 °C for 1 h. Subsequently, the nickel sheet and stress were removed and the specimens were annealed at 550 °C for 1 to 4 h. The experimental results indicate that the extent of MILC decreased when the preliminary compressive stress was increased, while all specimens exhibited the same rate of lateral crystallization during annealing. The present study indicates that, by applying an appropriate compressive stress (~ 4 MPa), an effective method to reduce the residual Ni content in polycrystalline silicon (poly-Si) can be obtained. |
| Databáze: | OpenAIRE |
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