Direct pattern transfer for sub-45nm features using nanoimprint lithography
| Autor: | Ngoc V. Le, William J. Dauksher, Kevin J. Nordquist, Eric S. Ainley, Pawitter J. S. Mangat, K. Gehoski |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Resolution (electron density) High resolution Nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nanoimprint lithography law.invention Nanolithography Flash (manufacturing) law Electrical and Electronic Engineering Lithography Layer (electronics) |
| Zdroj: | Microelectronic Engineering. 83:839-842 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2006.01.254 |
| Popis: | Recent advancements made in step and flash imprint lithography (S-FIL) have enhanced the attractiveness of nanoimprint technology for sub-100nm resolution. Improvements in the area of material dispensing and refinement of the etch barrier itself have resulted in more uniform printing while producing a much thinner residual layer. These improvements, coupled with changes to the etch processes have facilitated direct pattern transfer of sub-45nm line/space (1:3) features. This leading-edge research could define the pathway for nanoimprint to become a competitive solution for advanced high resolution pattern transfer. |
| Databáze: | OpenAIRE |
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