Optical and structural properties of dense SiO2, Ta2O5 and Nb2O5 thin-films deposited by indirectly reactive sputtering technique
| Autor: | Akinori Matusita, Yizhou Song, Kazuo Kikuchi, Shigeharu Matsumoto, Kazuhiko Maruta, Takeshi Sakurai, Shinichiro Saisho |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Analytical chemistry Oxide Dielectric Sputter deposition Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Sputtering Optoelectronics Deposition (phase transition) Thin film business Absorption (electromagnetic radiation) Instrumentation Refractive index |
| Zdroj: | Vacuum. 59:755-763 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/s0042-207x(00)00344-4 |
| Popis: | The indirectly reactive sputtering via radical source (ISR) system, which is a method to make an oxide film by repeating the separated deposition and oxidation using a d.c. pulse sputtering and an oxygen radical-rich source, was developed to deposit stoichiometric dielectric films with a relatively high deposition rate of about 0.4 nm/s. Under optimal deposition conditions, SiO2, Ta2O5, Nb2O5 films showed dense microstructures with high refractive indices and low optical absorption. The edge filter stacked by such dense film layers was wavelength shiftless. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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