Applicability of nitrogen‐doped ZnO single crystals for photoconductive type UV sensors

Autor: Tetsuya Chiba, Masahiro Daibo, Kazuyuki Meguro, Akira Nakagawa, Haruyuki Endo, Y. Kashiwaba, Shuzo Takahashi, Yasube Kashiwaba, Takami Abe, Shuzo Oshima, Syuhei Kamata, Michiko Nakagawa, Hiroshi Osada, Shigeki Chiba, Ikuo Niikura
Rok vydání: 2014
Předmět:
Zdroj: physica status solidi c. 11:1304-1307
ISSN: 1610-1642
1862-6351
Popis: Nitrogen-doped (N-doped) ZnO single crystals were prepared by the hydrothermal method. Resistivity of the N-doped ZnO single crystal was 107–108 Ωcm, which was about 104-times higher than that of the non-doped ZnO single crystal. Photocurrent of the O-face was larger than that of the Zn-face and maximum photoresponsivity was about 4×103 A/W. Photosensitivity (light/dark current ratio) of the Zn-face of the N-doped single crystal was 4×104 under illumination of 15 µW/cm2, but that of the O-face was about 7×104. The visible rejection ratio (UV/visible photocurrent ratio) was over 104 for the Zn-face of the N-doped ZnO single crystal. Time response of the photocurrent of the N-doped ZnO single crystal was remarkably improved compared to that of the non-doped ZnO single crystal. An N-doped ZnO single crystal is useful as a material for photoconductive type UV sensors. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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