Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
| Autor: | Kevin F. Brennan, İsmail H. Oğuzman, Ján Kolník, P. Paul Ruden, R. Wang |
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| Rok vydání: | 1997 |
| Předmět: |
Chemistry
Wide-bandgap semiconductor General Physics and Astronomy Gallium nitride Pseudopotential Condensed Matter::Materials Science Impact ionization chemistry.chemical_compound Ionization Physics::Atomic and Molecular Clusters Atomic physics Electronic band structure Electron ionization Wurtzite crystal structure |
| Zdroj: | Journal of Applied Physics. 81:726-733 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.364213 |
| Popis: | Calculations of the high-field electronic transport properties of bulk zinc-blende and wurtzite phase gallium nitride are presented focusing particularly on the electron initiated impact ionization rate. The calculations are performed using ensemble Monte Carlo simulations, which include the full details of the band structure derived from an empirical pseudopotential method. The model also includes the numerically generated electron impact ionization transition rate, calculated based on the pseudopotential band structures for both crystallographic phases. The electron initiated impact ionization coefficients are calculated as a function of the applied electric field. The electron distribution is found to be cooler and the ionization coefficients are calculated to be lower in the wurtzite phase as compared to zinc-blende gallium nitride at compatable electric-field strengths. The higher electron energies and the resulting larger impact ionization coefficients in zinc-blende gallium nitride are believed to ... |
| Databáze: | OpenAIRE |
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