| Autor: |
Kazuki Nomoto, Toshihiro Kawano, Tomoyoshi Mishima, Tadayoshi Tsuchiya, Tohru Nakamura, Naoki Kaneda |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :1299-1302 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.717-720.1299 |
| Popis: |
This report describes the first to fabricate GaN p-n junction diodes on free-standing GaN substrates with a 3mm diameter. For the diode of 3 mm in diameter, the specific on-resistance and the breakdown voltage were 124 mΩ•cm2 (at 4.0 V) and -450 V, respectively. Consequently, combination of our material and device processing revealed a record fabricated device size with a high breakdown voltage and low forward leakage current in GaN vertical diodes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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