TeSeF films by TeSe‐SeF6/Ar reactive sputtering for ablative optical recording
| Autor: | Mitsuaki Ohgaki, Horie Michikazu, Yoshimitsu Kobayashi, Tamura Takanori, Yoshiyuki Kisaka, Hidemi Yoshida |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 75:2680-2689 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.356221 |
| Popis: | A TeSeF film with fine polycrystalline structure with a grain size of less than about 1000 A had desirable properties as a recording layer for an ablative write‐once medium. Low media noise, and uniform and regular pit shape were achieved. The TeSeF film was prepared by reactive sputtering of TeSe in a gaseous mixture of Ar and SeF6. The fluorine‐doping effect on the crystallinity of TeSe alloy films and a reactive sputtering process with TeSe alloy target in a gaseous mixture of SeF6 and Ar were studied. With SeF6 flow, polycrystalline films with a large grain size of more than a few thousand A became amorphous in an as‐deposited state. After annealing below 100 °C, the amorphous films became fine polycrystalline with a 500–1000 A grain size. This crystallinity change was due to 20–30 at. % of fluorine incorporating into TeSe networks in a hexagonal structure. Most of fluorine was unstable and evolved immediately during annealing even below 100 °C. But the residual a few at. % of fluorine was strongly in... |
| Databáze: | OpenAIRE |
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