Phase-shift lithography for sub-wavelength patterns of varying aspect ratios
| Autor: | Angeline Klemm, Jian-Ping Wang, Andrew Lyle, Jonathan Harms, Todd Klein |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Process (computing) Condensed Matter Physics Aspect ratio (image) Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Feature (computer vision) law Electrical and Electronic Engineering Reactive-ion etching Stepper Photolithography business Lithography Nanoscopic scale |
| Zdroj: | Microelectronic Engineering. 130:57-61 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2014.09.022 |
| Popis: | Display Omitted We developed a low-cost mask making process for phase-shift lithography.Multiple exposures can be used to obtain sub-150nm elliptical features.Aspect ratio of features is controlled by changing mask angles between exposures.O2 reactive ion etching can be used to further reduce size of features.This cost-effective alternative allows researchers to pattern nanoscale features. A technique for creating phase shift photolithography masks for use with a stepper or mask aligner, as well as how to achieve sub-150nm features of different aspect ratios is described. The mask utilizes two different regions, one transparent region of only the mask material, and another transparent region of SiO2, which are overlapped to create the pattern. Patterning was done by use of a Canon Stepper. By adjusting the angle between the two mask regions, the aspect ratio, which is defined as the length:width, of features was controlled. Features below 100nm were patterned, and aspect ratios were controllably tuned between 1.1 and 2.6. The feature size was also shown to be able to be reduced by 25-30nm with the use of reactive ion etching. |
| Databáze: | OpenAIRE |
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