AlON thin films formed by ECR plasma oxidation for high-k gate insulator application

Autor:	Shun-ichiro Ohmi, Go Yamanaka, Tetsushi Sakai, Takafumi Uchikawa
Rok vydání:	2003
Předmět:	Materials science Sputtering Analytical chemistry Gate insulator Equivalent oxide thickness Plasma Thin film Microbiology Layer (electronics) Electron cyclotron resonance High-κ dielectric
Zdroj:	MRS Proceedings. 786
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-786-e6.10
Popis:	AlON thin films formed by the electron cyclotron resonance (ECR) plasma oxidation of the AlN thin films deposited on p/p+−Si(100) by the ECR sputtering method were investigated for high-k gate insulator application. The leakage current density was found to be decreased with the ECR plasma oxidation of the AlN thin films. Furthermore, the equivalent oxide thickness (EOT) of 1.5 nm with the leakage current density of 5.1×10−4 A/cm2 (@Vfb−1 V) was obtained after the 1000°C rapid thermal annealing (RTA) because of the high quality interfacial layer formation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::715ae6ab186e8929a42b74c51bbe838f https://doi.org/10.1557/proc-786-e6.10 Zobrazit plný text záznamu Full text from SpringerLink