Structural characterization and optical absorption spectrum of Cu3In5Te9 ordered defect semiconducting compound
| Autor: | C. Rincón, S.M. Wasim, L. Mogollón, G. Sánchez Pérez, E. Guedez, G. Marcano |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Absorption spectroscopy Band gap business.industry Mechanical Engineering Nanotechnology 02 engineering and technology Crystal structure 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Tetragonal crystal system Crystallography Semiconductor Absorption edge Mechanics of Materials Thermoelectric effect General Materials Science 0210 nano-technology business Powder diffraction |
| Zdroj: | Materials Letters. 186:155-157 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2016.09.122 |
| Popis: | The crystal structure of the ordered defect compound Cu3In5Te9, which has recently emerged as an excellent candidate for thermoelectric applications, was refined by the Rietveld method using X-ray powder diffraction data. It was established that this material crystallizes in the tetragonal ordered defect chalcopyrite or thiogallate structure with space group I 4 (No. 82). From the analysis of the optical absorption spectrum near the fundamental absorption edge it was also found that the energy gap is direct allowed and the band gap energy is about 0.952 eV at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect