Enhanced instantaneous bandwidth LDMOS RF power transistor using integrated passive devices
| Autor: | Bayaner Arigong, Haedong Jang, Richard Wilson |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
LDMOS
Engineering business.industry RF power amplifier Bandwidth (signal processing) Transistor Electrical engineering Power bandwidth 020206 networking & telecommunications 02 engineering and technology Instantaneous bandwidth law.invention Linearization law 0202 electrical engineering electronic engineering information engineering Electronic engineering Wireless business |
| Zdroj: | 2016 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2016.7540127 |
| Popis: | The exponential growth in data traffic across the wireless infrastructure network has necessitated the development of RF power devices capable of transmitting these higher bandwidth signals. In addition, the devices must work in the complete system, including the linearization technique used. In this paper, the benefits of integrated passive elements within the power device are demonstrated and compared to a standard LDMOS power device. In addition, the enhanced performance when used with a digital pre distortion system are demonstrated |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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