Hybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary inverters
| Autor: | Yuh Zheng Lee, Shiau-Shin Cheng, Li Fen Chu, Fang-Chung Chen, Dhananjay Kekuda, Chao Feng Sung, Meng-Chyi Wu, Chih-Wei Chu |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor General Chemistry Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials Titanium oxide law.invention Biomaterials chemistry.chemical_compound chemistry law Materials Chemistry Fluoropolymer Optoelectronics Electrical and Electronic Engineering business Low voltage Leakage (electronics) Electronic circuit |
| Zdroj: | Organic Electronics. 11:154-158 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2009.09.020 |
| Popis: | In this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (∼30 nm) fluoropolymer Cytop® layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k ∼ 20). The combined p-type and n-type field-effect transistors show similar saturation mobility ∼0.3 cm2/V s−1 to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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