Application of Raman spectroscopy for depth-dependent evaluation of the hydrogen concentration of amorphous silicon
| Autor: | F.C. Maier, Markus Hülsbeck, Stefan Haas, Wolfhard Beyer, Uwe Breuer, U. Zastrow, C. Maurer, Uwe Rau |
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| Rok vydání: | 2018 |
| Předmět: |
Amorphous silicon
Materials science Annealing (metallurgy) Analytical chemistry 02 engineering and technology Chemical vapor deposition 01 natural sciences chemistry.chemical_compound symbols.namesake 0103 physical sciences Materials Chemistry Physics::Atomic Physics Fourier transform infrared spectroscopy 010302 applied physics Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Wavelength chemistry symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Thin Solid Films. 653:223-228 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2018.02.037 |
| Popis: | The hydrogen concentration in hydrogenated amorphous silicon (a-Si:H), produced by plasma-enhanced chemical vapor deposition, was measured by Raman and Fourier transform infrared spectroscopy before and after thermal annealing. The possibility of Raman spectroscopy to perform depth dependent analysis in adapting the analysis wavelength is used. The findings presented in this paper are supported by secondary ion mass Spectrometry depth profiles. Moreover, we show that Raman spectroscopy can be used to get depth-dependent information about the microstructure and the influence of annealing on the microstructure of a-Si:H. |
| Databáze: | OpenAIRE |
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