High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors
Autor: | Aivars J. Lelis, F. B. McLean, Neil Goldsman, J.M. McGarrity, Stephen K. Powell |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 97:046106 |
ISSN: | 1089-7550 0021-8979 |
Popis: | We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors operating at high temperatures. We compare the model predictions with the device measurements from room temperature to 200 °C and find agreement. |
Databáze: | OpenAIRE |
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