High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Autor:	Aivars J. Lelis, F. B. McLean, Neil Goldsman, J.M. McGarrity, Stephen K. Powell
Rok vydání:	2005
Předmět:	Electron mobility Materials science business.industry Intrinsic semiconductor Hybrid silicon laser Doping Wide-bandgap semiconductor General Physics and Astronomy Silicon on insulator chemistry.chemical_compound chemistry Silicon carbide Optoelectronics Field-effect transistor business
Zdroj:	Journal of Applied Physics. 97:046106
ISSN:	1089-7550 0021-8979
Popis:	We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors operating at high temperatures. We compare the model predictions with the device measurements from room temperature to 200 °C and find agreement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7141f17cb7c0765ff0bc3cc892d5aa13 https://doi.org/10.1063/1.1849424 Zobrazit plný text záznamu