Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature
| Autor: | W. M. Lo, C. H. Lin, Pei-Jer Tzeng, C. S. Liang, Ming-Jinn Tsai, Shen-Chuan Lo, Y. W. Chou, Ching-Chiun Wang, H. Y. Li, Lurng-Shehng Lee |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry Nucleation Energy-dispersive X-ray spectroscopy General Physics and Astronomy chemistry.chemical_element Titanium nitride chemistry.chemical_compound Atomic layer deposition chemistry Transmission electron microscopy Phase (matter) Tin Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 45:3036-3039 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.3036 |
| Popis: | The rougher surface and raised-hollow holes were observed in the TiN/Al2O3/HfO2/Al2O3/TiN/SiO2/Si multi-stack metal–insulator–metal (MIM) capacitor sample after 1000 °C, 60 s rapid thermal annealing (RTA) process in N2. The surface became rougher partially resulted from the nucleation of TiN layer after RTA. Experimental results also indicated that the oxygen content in the HfO2 was desorbed and the remaining Hf was crystallized. Also, the TiN and Al2O3 layers were intermixed and partially re-crystallized at this high temperature. Very clear morie fringes could be observed in the high-resolution transmission electron microscopy (HR-TEM) micrographs. Also, the energy dispersive spectroscopy (EDS) results indicated that the nitrogen in TiN was desorbed and the TiN was phase transformed to TiO2. This phenomenon might result from the TiN oxidation process during the high-temperature thermal annealing. |
| Databáze: | OpenAIRE |
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