Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications
| Autor: | Ping-Chuan Wang, J. D. Gillis, R. Previti-Kelly, J. Dunn, Hanyi Ding, Peter J. Lindgren, Mete Erturk, Mark Doherty, Ramana M. Malladi, Mike McPartlin, Alvin J. Joseph, Ephrem G. Gebreselasie |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Wire bonding
Engineering Multi-mode optical fiber General Computer Science business.industry Amplifier Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Die (integrated circuit) Inductance Reduction (complexity) Reliability (semiconductor) Hardware_INTEGRATEDCIRCUITS Electronic engineering Quad Flat No-leads package business |
| Zdroj: | IBM Journal of Research and Development. 52:635-648 |
| ISSN: | 0018-8646 |
| DOI: | 10.1147/jrd.2008.5388563 |
| Popis: | We feature a 0.35-µm SiGe BiCMOS technology (SiGe 5PAe) that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low-inductance ground to the package using through-silicon vias (TSVs) that results in a competitive solution for future multiband and multimode PA integration. The tungsten-filled, multifinger, bar-shaped TSV delivers more than a 75% reduction in inductance compared to a traditional wirebond. This enables higher frequency applications with a roughly 20% reduction in die area without compromising the technology reliability for use conditions in a low-cost plastic QFN (quad flat no leads) package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, its reliability, and its usefulness in a demanding WiMAX® (Worldwide Interoperability for Microwave Access) PA application. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|