Growth of III–V semiconductor layers on Si patterned substrates
| Autor: | E. F. Venger, M. Faryna, S. V. Svechnikov, R. Ciach, T.Ya. Gorbach, R.Yu. Holiney, Petro Smertenko, L. A. Matveeva |
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| Rok vydání: | 1998 |
| Předmět: |
Thin layers
Materials science business.industry Scanning electron microscope Metals and Alloys Pulse duration Surfaces and Interfaces Substrate (electronics) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography Semiconductor Vacuum deposition Electron diffraction Materials Chemistry Optoelectronics Thin film business |
| Zdroj: | Thin Solid Films. 336:63-68 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)01213-9 |
| Popis: | Patterned unheated Si{100} substrates in the form of the regular tetragonal pyramids and a structure like hemispherical plates have been found to be effective for a pulse vacuum thermal deposition (pulse-VTD) of GaAs and GaP thin layers (50–500 nm). The effect of the pulse-VTD technological parameters (pulse duration, pulse period, pulse number, pulse current) and the features of the substrate patterns (terraces, steps, kinks, sponges) on the morphology, the composition and the crystallinity of GaAs and GaP layers have been characterized by scanning electron microscopy, electron X-ray analysis and electron diffraction. |
| Databáze: | OpenAIRE |
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