Manganese-doped(1−x)BiScO3–xPbTiO3high-temperature ferroelectrics: Defect structure and mechanism of enhanced electric resistivity
| Autor: | Emre Erdem, Mykhaylo Ozerov, Sergei Zvyagin, Rüdiger-A. Eichel, Jun Chen, Peter Jakes, Michael D. Drahus, Silke Schaab |
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| Rok vydání: | 2011 |
| Předmět: |
Physics
Condensed matter physics Doping Center (category theory) chemistry.chemical_element Manganese Condensed Matter Physics Electronic Optical and Magnetic Materials Crystallography chemistry Electrical resistivity and conductivity Scandium Charge compensation Manganese doping Electric resistivity |
| Zdroj: | Physical Review B. 84 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.84.064113 |
| Popis: | The effect of multivalency manganese doping on the defect structure and enhanced electrical resistivity is studied for the high-temperature piezoelectric ($1\ensuremath{-}x$)BiScO${}_{3}$--$x$PbTiO${}_{3}$ (BSPT) solid-solution system by means of multifrequency electron paramagnetic resonance spectroscopy combined with conductivity measurements. The results show that manganese is rather incorporated on a scandium than a titanium site as an isovalent substitute (${\mathrm{Mn}}_{\mathrm{Sc}}^{\ifmmode\times\else\texttimes\fi{}}$) instead of acceptor-type centers, such as ${\mathrm{Mn}}_{\mathrm{Ti}}^{\ensuremath{'}}$, ${\mathrm{Mn}}_{\mathrm{Ti}}^{\ensuremath{'}\ensuremath{'}}$, or ${\mathrm{Mn}}_{\mathrm{Sc}}^{\ensuremath{'}}$. The enhanced electric resistivity is found being on the one hand due to the trapping of conduction electrons at the manganese functional center sites (${\mathrm{Mn}}_{\mathrm{Sc}}^{\ifmmode\times\else\texttimes\fi{}}+{e}^{\ensuremath{'}}{\mathrm{Mn}}_{\mathrm{Sc}}^{\ensuremath{'}}$). On the other hand, through the formation of ${({\mathrm{Mn}}_{\mathrm{Sc}}^{\ensuremath{'}}\ensuremath{-}{V}_{\mathrm{O}}^{\ifmmode\bullet\else\textbullet\fi{}\ifmmode\bullet\else\textbullet\fi{}})}^{\ifmmode\bullet\else\textbullet\fi{}}$ defect complexes the ionic conductivity is reduced. Concerning the overall mechanism of charge compensation in that material, both kinds of defects mutually compensate. |
| Databáze: | OpenAIRE |
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