A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices

Autor:	M.S. Carroll, F.A. Stevie, P.A. Layman, A. Chen, C.S. Rafferty, S. Chaudhry, Y.F. Chyan, H.-H. Vuong, J.L. Lee, W.J. Nagy
Rok vydání:	2002
Předmět:	High energy Ion implantation Materials science Electrical resistance and conductance business.industry Bicmos process Bipolar junction transistor Electronic engineering Optoelectronics Bicmos integrated circuits business
Zdroj:	SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.
DOI:	10.1109/sispad.1997.621386
Popis:	A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in a BiCMOS process is developed. The methodology uses two dimensional process and device simulations to extract three dimensional collector resistances. The bias dependence of the collector resistance is also correctly predicted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::712dbb8d95244e0d67b12cb24a7a79f4 https://doi.org/10.1109/sispad.1997.621386 Zobrazit plný text záznamu