| Autor: |
B. Wernsman, D. M. Wilt, G. P. Schmuck, R. J. Wehrer, I. Ju, C. B. Geller, R. R. Siergiej, R. W. Smith |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.1539404 |
| Popis: |
0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ‐MIMs) having p‐type bases doped uniformly at 2×1017 cm−3 and inhomogeneously graded from 4×1016 cm−3 to 4×1017 cm−3 (10:1 doping ratio) were grown, processed, and characterized. The electrical performance of the devices with inhomogeneously graded bases was higher than that of the uniformly doped case due to the built‐in electric field in the base region, making QEint and JSC larger. The free carrier absorption increased due to the relatively higher doping levels for the linearly doped case but remained unchanged for the exponential profile. Therefore, results showed that exponentially grading the base p‐type doping increased the MIM performance by ∼ 8% (relative). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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