Autor: |
Niklas Sköld, L. Reine Wallenberg, Jakob Birkedal Wagner, Lars Samuelson |
Rok vydání: |
2010 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. 312:1755-1760 |
ISSN: |
0022-0248 |
Popis: |
The development of a ternary AlxIn1-xP shell grown around GaAs nanowires epitaxially grown in the [(1) over bar (1) over bar (1) over bar] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {1 (1) over bar 0} macro facets with small (approx. 5 nm) {1 1 (2) over bar} facets independent of the GaAs core side facets. Phase segregation is observed as AIP developing from the {1 1 (2) over bar} facets, while Al0.5In0.5P is found in the rest of the ternary shell. (C) 2010 Elsevier B.V. All rights reserved. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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