| Autor: |
Russell D. Young, Diana Nyyssonen, Arie W Hartman, William J. Keery, John M. Jerke, Richard E. Swing |
| Rok vydání: |
1977 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
In the current linewidth-measurement program at the National Bureau of Standards, the primary measurement of micrometer-wide lines on black-chromium artifacts is made with an interferometer located in a scanning electron microscope (SEM). The data output consists of a line-image profile from the electron detector and a fringe pattern from the interferometer. A correlation between edge location and fringe location is made for both line edges to give the linewidth in units of the wavelength of a He-Ne laser. A model has been developed to describe the interaction of the electrons with the material line and thereby relate a threshold value on the SEM image profile to a selected point on the material line. An optical linewidth-measuring microscope is used to transfer the primary measurements to secondary measurement artifacts; these artifacts will be used to transfer the linewidth measurements to the integrated-circuit industry. Linewidth measurements from the SEM/interferometer system and the optical linewidth-measuring microscope are compared, and the level of measurement uncertainty for each system is discussed.© (1977) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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