Carrier density dependence of the stark shift in (111) InGaAs/GaAs double-quantum-well structures

Autor:	K. J. Moore, M. Moran, P. Dawson
Rok vydání:	1995
Předmět:	Materials science Field (physics) Condensed matter physics Ingaas gaas General Physics and Astronomy Electron Piezoelectricity Condensed Matter::Materials Science symbols.namesake Charge-carrier density Stark effect symbols Double quantum Excitation
Zdroj:	Il Nuovo Cimento D. 17:1619-1623
ISSN:	0392-6737
Popis:	We have measured the optical properties of a series of strained InxGa1−xAs/GaAs (x=0.09) double-quantum-well structures with different barrier thicknesses grown on (111)B-orientated GaAs substrates. We observed an increase in the Stark shift due to the internal-strain-induced piezoelectric field as a function of increased barrier thickness. As the optical excitation density was increased the Stark shift was found to decrease due to photoscreening of the internal field by the spatially separated electron/hole populations. The extent of the photoscreening was found to be ultimately limited by occupancy of the second heavy-hole subband. Good agreement was found between the measured photoscreening of the piezoelectric field and self-consistent solutions of Schrodinger's and Poisson's equations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::710eaa3ae81fc239c4ec734d509863f2 https://doi.org/10.1007/bf02457253 Zobrazit plný text záznamu Full text from SpringerLink